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IRFB4310GPBF

Part No IRFB4310GPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 130A TO-220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 250nC @ 10V
Max Input Capacitance 7670pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 7 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1046817-IRFB4310GPBF
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IRFB4310GPBF CAD Model

Description

The Infineon Technologies IRFB4310GPBF is a MOSFET transistor that is designed for use in discrete semiconductor products.

  • Channel Type: N-Channel
  • Drain-Source Breakdown Voltage: 100V
  • Maximum Continuous Drain Current @ 25°C: 130A
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 250nC @ 10V
  • Maximum Rds On at Id, Vgs: 7 mOhm @ 75A, 10V
  • Technology: MOSFET
  • Polarity: N-Channel
  • Power Dissipation (max): 300W (Tc)
  • Package: TO-220AB
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Package Quantity: 50

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.8212 $61.5900
175+ $0.6745 $118.0375
270+ $0.6537 $176.4990
370+ $0.6318 $233.7660
475+ $0.6110 $290.2250
635+ $0.5475 $347.6625
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 85,140 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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