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IRFB4310ZPBF

Part No IRFB4310ZPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 120A TO-220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 150μA
Max Gate Charge 170nC @ 10V
Max Input Capacitance 6860pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 250W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 090724-IRFB4310ZPBF
Family Name IRFB4310Z
Introduction Date March 05, 2007
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFB4310ZPBF CAD Model

Description

The Infineon Technologies IRFB4310ZPBF is an N-channel MOSFET designed for use in a variety of applications, including power supplies, motor control, and lighting.

  • Maximum Power Dissipation: 250W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 120A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 150μA
  • Maximum Gate Charge: 170nC @ 10V
  • Package: TO-220AB
  • Halogen-Free Compliant: Yes
  • Supply and Demand Status: Sufficient
  • Estimated EOL Date: 2024

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1496 $51.7320
110+ $0.9433 $103.7630
165+ $0.9138 $150.7770
230+ $0.8843 $203.3890
295+ $0.8548 $252.1660
395+ $0.7664 $302.7280
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,500 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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