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IRFB4710 Infineon Technologies IRFB4710 Real Image IRFB4710 real image 2 IRFB4710 real image 3 IRFB4710 label picture IRFB4710 label picture 2 IRFB4710 label picture 3 IRFB4710 label picture 4 IRFB4710 label picture 5
Same model may have multiple batches, images only for reference.
IRFB4710 Infineon Technologies IRFB4710 Real Image IRFB4710 real image 2 IRFB4710 real image 3 IRFB4710 label picture IRFB4710 label picture 2 IRFB4710 label picture 3 IRFB4710 label picture 4 IRFB4710 label picture 5
IRFB4710 Infineon Technologies IRFB4710 Real Image IRFB4710 real image 2 IRFB4710 real image 3 IRFB4710 label picture IRFB4710 label picture 2 IRFB4710 label picture 3 IRFB4710 label picture 4 IRFB4710 label picture 5
Same model may have multiple batches, images only for reference.

IRFB4710

Part No IRFB4710
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 75A TO-220AB
Datasheet
IRFB4710 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 170nC @ 10V
Max Input Capacitance 6160pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 200W (Tc)
Maximum Rds On at Id,Vgs 14 mOhm @ 45A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 040711-IRFB4710
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFB4710 CAD Model

Description

The Infineon IRFB4710 is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 3.8W @ 25°C, 200W @ Tc
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 75A @ 25°C
  • Gate-Source Threshold Voltage: 5.5V @ 250μA
  • Maximum Gate Charge: 170nC @ 10V
  • Maximum Rds On at Id,Vgs: 14 mOhm @ 45A, 10V
  • Package: TO-220AB
  • Mounting Type: Through-Hole
  • Temperature Range: -55°C to 175°C (TJ)

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54+ $1.8606 $100.4724
84+ $1.8024 $151.4016
115+ $1.7443 $200.5945
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199+ $1.5117 $300.8283
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