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IRFB7537PBF

Part No IRFB7537PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 60V 173A TO-220AB / Trans MOSFET N-CH 60V 173A 3-Pin(3+Tab) TO-220AB Tube
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 173A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.7V @ 150μA
Max Gate Charge 210nC @ 10V
Max Input Capacitance 7020pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 230W (Tc)
Maximum Rds On at Id,Vgs 3.3 mOhm @ 100A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 205347-IRFB7537PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name IRFB7537
Introduction Date March 19, 2014
ECCN EAR99
Country of Origin China
Estimated EOL Date 2030
Ultra Librarian 3D Model Ultra Librarian IRFB7537PBF CAD Model

Description

The Infineon Technologies IRFB7537PBF is a high popularity electronic component with a limited supply and demand status.

  • Maximum Power Dissipation: 230W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Temperature Range: -55°C to 175°C (TJ)
  • Package: TO-220AB
  • Maximum Gate-Source Voltage: ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8965 $53.7900
140+ $0.7356 $102.9840
215+ $0.7126 $153.2090
295+ $0.6896 $203.4320
380+ $0.6666 $253.3080
505+ $0.5977 $301.8385
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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