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Same model may have multiple batches, images only for reference.
IRFBA90N20D Infineon Technologies
Same model may have multiple batches, images only for reference.

IRFBA90N20D

Part No IRFBA90N20D
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 98A SUPER-220
Datasheet
IRFBA90N20D Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 240nC @ 10V
Max Input Capacitance 6080pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 650W (Tc)
Maximum Rds On at Id,Vgs 23 mOhm @ 59A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package SUPER-220 (TO-273AA)
Dimension Super-220-3 (Straight Leads)
Win Source Part Number 069465-IRFBA90N20D
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFBA90N20D CAD Model

Description

The Infineon Technologies MOSFET component has a limited supply and demand status.

  • Win Source Part Number: 069465
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 98A (Tc)
  • Temperature Range: -55°C to 175°C (TJ)
  • Maximum Gate-Source Voltage: ±30V

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