The Infineon Technologies N-Channel MOSFET is an electronic component with a drain-source breakdown voltage of 40V and a continuous drain current at 25°C of 22A (Ta), 100A (Tc).

• Drain-Source Breakdown Voltage: 40V
• Continuous Drain Current @ 25°C: 22A (Ta), 100A (Tc)
• Gate-Source Threshold Voltage: 4V @ 100μA
• Maximum Gate Charge: 65nC @ 10V
• Maximum Rds On @ Id,Vgs: 4.3 mOhm @ 50A, 10V
• Mounting Type: Surface Mount
• Package: PQFN (5x6)
• Power Dissipation (max): 3.6W (Ta), 105W (Tc)
• Operating Temperature: -55°C to 150°C (TJ)