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Same model may have multiple batches, images only for reference.
IRFH5300TR2PBF Real Image
Same model may have multiple batches, images only for reference.

IRFH5300TR2PBF

Part No IRFH5300TR2PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 40A PQFN  /  N-Channel 30 V 40A (Ta), 100A (Tc) Surface Mount PQFN (5x6) Single Die
Datasheet
IRFH5300TR2PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Package Cut Tape (CT),
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 40A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs 1.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.35V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 7200 pF @ 15 V
Mounting SMD (SMT)
Supplier Device Package PQFN (5x6) Single Die
Package / Case 8-PowerVDFN
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names IRFH5300TR2PBFCT,SP001556384,IRFH5300TR2PBFDKR,IRFH5300TR2PBFTR
Standard Package 400
Win Source Part Number 1065545-IRFH5300TR2PBF
Ultra Librarian 3D Model Ultra Librarian IRFH5300TR2PBF CAD Model

Description

The Infineon Technologies IRFH5300TR2PBF is a N-channel MOSFET transistor with a drain to source voltage (Vdss) of 30V and a continuous drain current (Id) of 40A (Ta), 100A (Tc).

  • On-Resistance (Max): 1.4mOhm @ 50A, 10V
  • Gate Charge (Qg): 120 nC @ 10V
  • Input Capacitance (Ciss): 7200 pF @ 15V
  • Gate Threshold Voltage (Vgs(th)): 2.35V @ 150μA
  • Package: 8-PowerVDFN
  • Suitable for: Discrete Semiconductor Products, particularly in Transistors - FETs, MOSFETs - Single

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