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Same model may have multiple batches, images only for reference.
IRFH5301TR2PBF Real Image
Same model may have multiple batches, images only for reference.

IRFH5301TR2PBF

Part No IRFH5301TR2PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 35A 5X6 PQFN
Datasheet
IRFH5301TR2PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Reel
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 35A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 100μA
Max Gate Charge 77nC @ 10V
Max Input Capacitance 5114pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.6W (Ta), 110W (Tc)
Maximum Rds On at Id,Vgs 1.85 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PQFN (5x6) Single Die
Dimension 8-PowerVDFN
Win Source Part Number 130655-IRFH5301TR2PBF
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management, Computers & Computer Peripherals, Industrial
Ultra Librarian 3D Model Ultra Librarian IRFH5301TR2PBF CAD Model

Description

The Infineon Technologies IRFH5301TR2PBF is a MOSFET transistor with N-channel polarity and a drain-source breakdown voltage of 30V.

  • Maximum Power Dissipation: 3.6W (Ta) and 110W (Tc)
  • Continuous Drain Current: 35A (Ta) and 100A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2.35V @ 100μA
  • Maximum Gate Charge: 77nC @ 10V
  • Package: PQFN (5x6) single die
  • Applications: power management, computers, and computer peripherals, and industrial applications
  • Maximum Rds On at Id,Vgs: 1.85 mOhm @ 50A, 10V
  • Alternative Parts: NTMFS4982NFT1G, CSD17312Q5, and AON7758
  • Status: obsolete (EOL)
  • Supply and Demand Status: limited

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