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Same model may have multiple batches, images only for reference.
IRFH5303TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFH5303TRPBF

Part No IRFH5303TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 82A 8-PQFN
Datasheet
IRFH5303TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 23A (Ta), 82A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 50μA
Max Gate Charge 41nC @ 10V
Max Input Capacitance 2190pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.6W (Ta), 46W (Tc)
Maximum Rds On at Id,Vgs 4.2 mOhm @ 49A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PQFN (5x6)
Dimension 8-PowerVDFN
Win Source Part Number 1046880-IRFH5303TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFH5303TRPBF CAD Model

Description

The Infineon Technologies IRFH5303TRPBF is a N-Channel MOSFET that is designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 23A (Ta), 82A (Tc)
  • Maximum Rds On @ Id,Vgs: 4.2 mOhm @ 49A, 10V
  • Package: PQFN (5x6)
  • Dimension: 8-PowerVDFN
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 41nC @ 10V
  • Gate-Source Threshold Voltage: 2.35V @ 50μA
  • Maximum Input Capacitance: 2190pF @ 15V
  • Lifecycle Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand Status: balanced

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