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Same model may have multiple batches, images only for reference.
IRFH6200TR2PBF Real Image
Same model may have multiple batches, images only for reference.

IRFH6200TR2PBF

Part No IRFH6200TR2PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 100A 5X6 PQFN
Datasheet
IRFH6200TR2PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Reel
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 49A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Gate-Source Threshold Voltage 1.1V @ 150μA
Max Gate Charge 230nC @ 4.5V
Max Input Capacitance 10890pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 3.6W (Ta), 156W (Tc)
Maximum Rds On at Id,Vgs 0.95 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PQFN (5x6)
Dimension 8-PowerVDFN
Win Source Part Number 140785-IRFH6200TR2PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFH6200TR2PBF CAD Model

Description

The Infineon Technologies IRFH6200TR2PBF is an N-channel MOSFET transistor designed for discrete semiconductor applications.

  • Maximum Power Dissipation: 3.6W (Ta), 156W (Tc)
  • Maximum Drain-Source Breakdown Voltage: 20V
  • Supply and Demand Status: Limited
  • Package: PQFN (5x6)
  • Maximum Continuous Drain Current: 49A (Ta), 100A (Tc)

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