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IRFH7936TRPBF

Part No IRFH7936TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 20A PQFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 20A (Ta), 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 50μA
Max Gate Charge 26nC @ 4.5V
Max Input Capacitance 2360pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta)
Maximum Rds On at Id,Vgs 4.8 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PQFN (5x6)
Dimension 8-PowerVDFN
Win Source Part Number 017601-IRFH7936TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFH7936TRPBF CAD Model

Description

The Infineon Technologies 017601-IRFH7936TRPBF is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 20A @ 25°C
  • Gate-Source Threshold Voltage: 2.35V @ 50μA
  • Maximum Gate Charge: 26nC @ 4.5V
  • Maximum Input Capacitance: 2360pF @ 15V
  • Maximum Rds On @ Id,Vgs: 4.8 mOhm @ 20A, 10V
  • Status: Active
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: PQFN (5x6)
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5047 $58.0405
280+ $0.4146 $116.0880
435+ $0.4008 $174.3480
600+ $0.3881 $232.8600
770+ $0.3754 $289.0580
1,035+ $0.3361 $347.8635
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,103 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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