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Same model may have multiple batches, images only for reference.
IRFHM4234TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFHM4234TRPBF

Part No IRFHM4234TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 20A PQFN
Datasheet
IRFHM4234TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.1V @ 25μA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 1011pF @ 13V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.8W (Ta), 28W (Tc)
Maximum Rds On at Id,Vgs 4.4 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Dimension 8-TQFN Exposed Pad
Win Source Part Number 1046905-IRFHM4234TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFHM4234TRPBF CAD Model

Description

The Infineon Technologies IRFHM4234TRPBF is an N-Channel MOSFET transistor designed for use in discrete semiconductor products.

  • Type: N-Channel MOSFET
  • Application: Discrete Semiconductor Products
  • Maximum Power Dissipation: 2.8W (Ta), 28W (Tc)
  • Drain-Source Breakdown Voltage: 25V
  • Mounting: Surface-Mount
  • Package: 8-TQFN Exposed Pad
  • Gate-Source Threshold Voltage: 2.1V @ 25μA
  • Maximum Rds On @ Id,Vgs: 4.4 mOhm @ 30A, 10V

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215+ $0.5445 $117.0675
330+ $0.5275 $174.0750
455+ $0.5105 $232.2775
590+ $0.4934 $291.1060
785+ $0.4424 $347.2840
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