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IRFHM830DTR2PBF

Part No IRFHM830DTR2PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 20A PQFN / N-Channel 30 V 20A (Ta), 40A (Tc) Surface Mount PQFN (3x3)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Package Cut Tape (CT),
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs 4.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.35V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 1797 pF @ 25 V
Mounting SMD (SMT)
Supplier Device Package PQFN (3x3)
Package / Case 8-VQFN Exposed Pad
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names IRFHM830DTR2PBFTR,SP001551956,IRFHM830DTR2PBFCT,IRFHM830DTR2PBFDKR
Standard Package 400
Win Source Part Number 1065554-IRFHM830DTR2PBF
Ultra Librarian 3D Model Ultra Librarian IRFHM830DTR2PBF CAD Model

Description

The Infineon Technologies 1065554-IRFHM830DTR2PBF MOSFET (Metal Oxide) is an N-Channel FET that features a drain to source voltage (Vdss) of 30 V and a continuous drain current (Id) of 20A (Ta), 40A (Tc) @ 25°C.

  • Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 50μA
  • Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1797 pF @ 25 V
  • Package: PQFN (3x3) with exposed pad
  • Ideal for: Power supplies, DC-DC converters, and motor control

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.3175 $57.9375
61+ $1.9016 $115.9976
95+ $1.8422 $175.0090
130+ $1.7828 $231.7640
168+ $1.7234 $289.5312
225+ $1.5451 $347.6475
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,090 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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