The Infineon Technologies MOSFET is a N-channel power MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 13A @ 25°C.

• Drain-Source Breakdown Voltage: 30V
• Continuous Drain Current: 13A @ 25°C
• Maximum Rds on: 9 mOhm @ 20A, 10V
• Gate-Source Threshold Voltage: 2.35V @ 25μA
• Maximum Gate-Source Voltage: ±20V
• Max Gate Charge: 15nC @ 10V
• Drive Voltage: 4.5V and 10V for max Rds on and min Rds on, respectively
• Suitable For: Discrete Semiconductor Products
• Power Dissipation: 2.7W (Ta) and 28W (Tc)
• Package: 8-PQFN (3.3x3.3), Power33
• Dimension: 8-PowerTDFN