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IRFHM8337TRPBF

Part No IRFHM8337TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 12A 8PQFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 25μA
Max Gate Charge 8.1nC @ 4.5V
Max Input Capacitance 755pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.8W (Ta), 25W (Tc)
Maximum Rds On at Id,Vgs 12.4 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-PQFN (3.3x3.3), Power33
Dimension 8-PowerTDFN
Win Source Part Number 1046912-IRFHM8337TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFHM8337TRPBF CAD Model

Description

The Infineon Technologies IRFHM8337TRPBF is an N-channel MOSFET that is designed for use in a variety of applications.

  • Power Dissipation (max): 2.8W (Ta), 25W (Tc)
  • Mounting Technology: SMD (SMT)
  • Product Category: Discrete Semiconductor Products
  • Product Status: active
  • Case/Package: 8-PQFN (3.3x3.3), Power33
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 12A (Ta)
  • Gate-Source Threshold Voltage: 2.35V @ 25μA
  • Maximum Gate Charge: 8.1nC @ 4.5V
  • Maximum Input Capacitance: 755pF @ 15V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id, Vgs: 12.4 mOhm @ 12A, 10V
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $5.8208 $52.3872
21+ $4.7761 $100.2981
33+ $4.6268 $152.6844
45+ $4.4776 $201.4920
58+ $4.3283 $251.0414
78+ $3.8806 $302.6868
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,100 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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