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Same model may have multiple batches, images only for reference.
IRFHM4231TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFHM4231TRPBF

Part No IRFHM4231TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 40A PQFN
Datasheet
IRFHM4231TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.1V @ 35μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 1270pF @ 13V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.7W (Ta), 29W (Tc)
Maximum Rds On at Id,Vgs 3.4 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-PQFN (3x3)
Dimension 8-PowerTDFN
Win Source Part Number 1046904-IRFHM4231TRPBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFHM4231TRPBF CAD Model

Description

The Infineon Technologies MOSFET is a high-performance N-channel MOSFET.

  • Manufacturer: Infineon Technologies
  • Type: N-channel MOSFET
  • Power Dissipation: 2.7W (Ta) and 29W (Tc)
  • Drain-Source Breakdown Voltage: 25V
  • Package: 8-PQFN (3x3)
  • Mounting: SMD (SMT)
  • Maximum Gate-Source Voltage: ±20V
  • Max Rds On @ Id,Vgs: 3.4 mOhm @ 30A, 10V
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand: Sufficient
  • Input Capacitance: 1270pF @ 13V
  • Gate-Source Threshold Voltage: 2.1V @ 35μA

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