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IRFHM8363TRPBF Real Image IRFHM8363TRPBF real image10310
Same model may have multiple batches, images only for reference.
IRFHM8363TRPBF Real Image IRFHM8363TRPBF real image10310
IRFHM8363TRPBF Real Image IRFHM8363TRPBF real image10310
Same model may have multiple batches, images only for reference.

IRFHM8363TRPBF

Part No IRFHM8363TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 11A 8PQFN
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Not For New Designs
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11A
Maximum Rds On at Id,Vgs 14.9 mOhm @ 10A, 10V
Gate-Source Threshold Voltage 2.35V @ 25μA
Max Gate Charge 15nC @ 10V
Max Input Capacitance 1165pF @ 10V
Maximum Power Dissipation 2.7W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-PQFN (3.3x3.3), Power33
Win Source Part Number 1046914-IRFHM8363TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFHM8363TRPBF CAD Model

Description

The Infineon Technologies 1046914-IRFHM8363TRPBF is a dual N-channel MOSFET transistor designed for use in power management applications.

  • Gate Type: Logic level gate
  • Maximum Power Dissipation: 2.7W
  • Recommendation: Not recommended for new designs
  • Popularity: Medium
  • Maximum Rds On: 14.9 mOhm @ 10A, 10V
  • Continuous Drain Current: 11A @ 25°C

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65+ $0.7783 $50.5895
140+ $0.7290 $102.0600
215+ $0.7044 $151.4460
310+ $0.6551 $203.0810
400+ $0.6305 $252.2000
500+ $0.6059 $302.9500
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