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Same model may have multiple batches, images only for reference.
IRFIZ34NPBF Real Image
Same model may have multiple batches, images only for reference.

IRFIZ34NPBF

Part No IRFIZ34NPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 21A TO220FP
Datasheet
IRFIZ34NPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 34nC @ 10V
Max Input Capacitance 700pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 37W (Tc)
Maximum Rds On at Id,Vgs 40 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB Full-Pak
Dimension TO-220-3 Full Pack
Win Source Part Number 040722-IRFIZ34NPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFIZ34NPBF CAD Model

Description

The Infineon Technologies MOSFET is a N-Channel polarity power transistor designed for discrete semiconductor products.

  • Maximum Power Dissipation: 37W (Tc)
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 21A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 34nC @ 10V
  • Maximum Input Capacitance: 700pF @ 25V
  • Maximum Rds On: 40 mOhm @ 11A, 10V
  • Package: TO-220AB Full-Pak
  • Dimension: TO-220-3 Full Pack

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9748 $58.4880
145+ $0.8000 $116.0000
225+ $0.7749 $174.3525
310+ $0.7500 $232.5000
400+ $0.7249 $289.9600
535+ $0.6500 $347.7500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,100 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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