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IRFL024ZTRPBF

Part No IRFL024ZTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 55V 5.1A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 55V 5.1A SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 5.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 340pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 57.5 mOhm @ 3.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 017616-IRFL024ZTRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name IRFL024Z
Introduction Date May 25, 2004
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRFL024ZTRPBF CAD Model

Description

The Infineon Technologies IRFL024ZTRPBF is a MOSFET transistor with an N-channel polarity.

  • Maximum Power Dissipation: 1W (Ta)
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current @ 25°C: 5.1A (Ta)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 14nC @ 10V
  • Package: SOT-223
  • Temperature Range: -55°C to 150°C (TJ)
  • Maximum Rds On: 57.5 mOhm @ 3.1A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.3496 $50.6920
350+ $0.2869 $100.4150
540+ $0.2779 $150.0660
745+ $0.2690 $200.4050
965+ $0.2600 $250.9000
1,290+ $0.2331 $300.6990
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,999 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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