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Same model may have multiple batches, images only for reference.
IRFL4105TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFL4105TRPBF

Part No IRFL4105TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 3.7A SOT223
Datasheet
IRFL4105TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 35nC @ 10V
Max Input Capacitance 660pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 45 mOhm @ 3.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 105848-IRFL4105TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFL4105TRPBF CAD Model

Description

The Infineon Technologies 105848-IRFL4105TRPBF is an N-Channel MOSFET with a drain-source breakdown voltage of 55V and a continuous drain current of 3.7A at 25°C.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 3.7A @ 25°C
  • Maximum Rds On: 45 mOhm @ 3.7A and 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 35nC @ 10V
  • Maximum Input Capacitance: 660pF @ 25V
  • Package: SOT-223 package
  • Temperature Range: -55°C to 150°C

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Quantity Unit Price Ext. Price
35+ $1.4553 $50.9355
85+ $1.1941 $101.4985
130+ $1.1568 $150.3840
180+ $1.1195 $201.5100
235+ $1.0821 $254.2935
310+ $0.9702 $300.7620
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