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Same model may have multiple batches, images only for reference.
IRFP1405PBF Real Image
Same model may have multiple batches, images only for reference.

IRFP1405PBF

Part No IRFP1405PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 95A TO-247AC
Datasheet
IRFP1405PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 95A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 180nC @ 10V
Max Input Capacitance 5600pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 310W (Tc)
Maximum Rds On at Id,Vgs 5.3 mOhm @ 95A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Dimension TO-247-3
Win Source Part Number 205372-IRFP1405PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFP1405PBF CAD Model

Description

The Infineon IRFP1405PBF is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 310W @ Tc
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 95A @ Tc
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 180nC @ 10V
  • Maximum Rds On at Id,Vgs: 5.3 mOhm @ 95A, 10V
  • Package: TO-247AC case
  • Mounting: through-hole
  • Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.6807 $50.4210
64+ $1.5743 $100.7552
99+ $1.5211 $150.5889
142+ $1.4147 $200.8874
184+ $1.3615 $250.5160
230+ $1.3084 $300.9320
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 42,010 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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