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IRFP250MPBF

Part No IRFP250MPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 30A TO-247AC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 123nC @ 10V
Max Input Capacitance 2159pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 214W (Tc)
Maximum Rds On at Id,Vgs 75 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Dimension TO-247-3
Win Source Part Number 069505-IRFP250MPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFP250MPBF CAD Model

Description

The Infineon Technologies IRFP250MPBF is a MOSFET N-Channel transistor with a package of TO-247-3.

  • Power Dissipation (Max): 214W (Tc)
  • Product Category: Discrete Semiconductor Product
  • ECCN: EAR99
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Supply and Demand Status: Balanced
  • Dimension: TO-247AC
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current at 25°C: 30A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Max Gate Charge: 123nC @ 10V
  • Max Input Capacitance: 2159pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id,Vgs: 75 mOhm @ 18A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5731 $51.5790
190+ $0.5368 $101.9920
290+ $0.5187 $150.4230
415+ $0.4824 $200.1960
540+ $0.4643 $250.7220
675+ $0.4462 $301.1850
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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