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Same model may have multiple batches, images only for reference.
IRFP7430PBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRFP7430PBF

Part No IRFP7430PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 40V 195A TO247
Datasheet
IRFP7430PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.9V @ 250μA
Max Gate Charge 460nC @ 10V
Max Input Capacitance 14240pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 366W (Tc)
Maximum Rds On at Id,Vgs 1.3 mOhm @ 100A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Dimension TO-247-3
Win Source Part Number 040731-IRFP7430PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFP7430PBF CAD Model

Description

The Infineon Technologies IRFP7430PBF MOSFET is a high-performance N-channel transistor that is ideal for use in a wide range of electronic applications.

  • Maximum Power Dissipation: 366W (Tc)
  • Drain-Source Breakdown Voltage: 40V
  • Maximum Continuous Drain Current: 195A (Tc)
  • Gate-Source Threshold Voltage: 3.9V @ 250μA
  • Maximum Gate Charge: 460nC @ 10V
  • Package: TO-247AC
  • Maximum Input Capacitance: 14240pF @ 25V
  • Supply and Demand Status: balanced

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Quantity Unit Price Ext. Price
30+ $2.2072 $66.2160
65+ $1.8110 $117.7150
100+ $1.7544 $175.4400
140+ $1.6979 $237.7060
180+ $1.6413 $295.4340
240+ $1.4715 $353.1600
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