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Same model may have multiple batches, images only for reference.
IRFR1018EPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRFR1018EPBF

Part No IRFR1018EPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 79A DPAK
Datasheet
IRFR1018EPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 100μA
Max Gate Charge 69nC @ 10V
Max Input Capacitance 2290pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 8.4 mOhm @ 47A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 205384-IRFR1018EPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFR1018EPBF CAD Model

Description

The IRFR1018EPBF from Infineon Technologies is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 56A (Tc)
  • Maximum Power Dissipation: 110W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)
  • Package: D-Pak
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Popularity: Medium
  • Supply and Demand Status: Limited

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Quantity Unit Price Ext. Price
70+ $0.7636 $53.4520
160+ $0.6266 $100.2560
250+ $0.6070 $151.7500
345+ $0.5874 $202.6530
445+ $0.5679 $252.7155
590+ $0.5091 $300.3690
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