IRFR1018EPBF

Part No IRFR1018EPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 79A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 100μA
Max Gate Charge 69nC @ 10V
Max Input Capacitance 2290pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 8.4 mOhm @ 47A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 205384-IRFR1018EPBF
Popularity Medium
Supply and Demand Status Limited

Description

The IRFR1018EPBF from Infineon Technologies is an N-channel MOSFET designed for use in discrete semiconductor products. The device comes with a drain-source breakdown voltage of 60V and can deliver a continuous drain current of 56A (Tc). The MOSFET has a maximum power dissipation of 110W (Tc) and is designed to operate at an extended temperature range of -55°C to 175°C (TJ). The device is packaged in D-Pak and has a dimension of TO-252-3, DPak (2 Leads + Tab), SC-63. The IRFR1018EPBF has a medium popularity in the market, and the supply and demand status is limited.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
75+ $0.6740 $50.5500
160+ $0.6310 $100.9600
250+ $0.6090 $152.2500
355+ $0.5660 $200.9300
460+ $0.5440 $250.2400
575+ $0.5220 $300.1500
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 29,101 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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