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Same model may have multiple batches, images only for reference.
IRFR12N25D Real Image
Same model may have multiple batches, images only for reference.

IRFR12N25D

Part No IRFR12N25D
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 14A DPAK
Datasheet
IRFR12N25D Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 35nC @ 10V
Max Input Capacitance 810pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 144W (Tc)
Maximum Rds On at Id,Vgs 260 mOhm @ 8.4A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047022-IRFR12N25D
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 75
Ultra Librarian 3D Model Ultra Librarian IRFR12N25D CAD Model

Description

The Infineon Technologies IRFR12N25D is an N-Channel MOSFET electronic component that has a maximum power dissipation of 144W (Tc).

  • Maximum Power Dissipation: 144W (Tc)
  • Mounting Technology: SMD (SMT)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Product Status: Obsolete (EOL)
  • Operating Temperature: -55°C to 175°C (TJ)
  • Case/Package: D-Pak
  • Drain-Source Breakdown Voltage: 250V
  • Package Quantity: 75

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9644 $57.8640
150+ $0.7923 $118.8450
230+ $0.7669 $176.3870
315+ $0.7427 $233.9505
405+ $0.7173 $290.5065
540+ $0.6433 $347.3820
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 75,300 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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