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Same model may have multiple batches, images only for reference.
IRFR18N15DPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR18N15DPBF

Part No IRFR18N15DPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 18A DPAK
Datasheet
IRFR18N15DPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 43nC @ 10V
Max Input Capacitance 900pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 125 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 040737-IRFR18N15DPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFR18N15DPBF CAD Model

Description

The Infineon Technologies IRFR18N15DPBF is a N-channel MOSFET transistor with a drain-source breakdown voltage of 150V and a continuous drain current of 18A @ 25°C.

  • Maximum Power Dissipation: 110W (Tc)
  • Maximum Rds On: 125 mOhm @ 11A and 10V
  • Package: D-Pak package with two leads and a tab
  • Mounting: Suitable for SMD (SMT) mounting
  • Gate-Source Threshold Voltage: 5.5V @ 250μA
  • Maximum Gate Charge: 43nC @ 10V
  • Status: Limited supply and demand status
  • Application: Suitable for a wide range of applications in discrete semiconductor products

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