IRFR18N15DPBF

Part No IRFR18N15DPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 18A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 43nC @ 10V
Max Input Capacitance 900pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 125 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 040737-IRFR18N15DPBF
Popularity Medium
Supply and Demand Status Limited

Description

The Infineon Technologies IRFR18N15DPBF is a N-channel MOSFET transistor with a drain-source breakdown voltage of 150V and a continuous drain current of 18A at 25°C. It has a maximum power dissipation of 110W (Tc) and a maximum Rds On of 125 mOhm at 11A and 10V. This transistor is mounted on a D-Pak package with two leads and a tab, and it is suitable for SMD (SMT) mounting. The gate-source threshold voltage is 5.5V at 250μA, and the maximum gate charge is 43nC at 10V. It has a limited supply and demand status, and it is suitable for a wide range of applications in discrete semiconductor products.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
75+ $0.6980 $52.3500
175+ $0.5730 $100.2750
275+ $0.5550 $152.6250
375+ $0.5370 $201.3750
485+ $0.5190 $251.7150
650+ $0.4650 $302.2500
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 572 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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