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Same model may have multiple batches, images only for reference.
IRFR2307ZTRLPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR2307ZTRLPBF

Part No IRFR2307ZTRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 42A DPAK
Datasheet
IRFR2307ZTRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 100μA
Max Gate Charge 75nC @ 10V
Max Input Capacitance 2190pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 16 mOhm @ 32A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 069536-IRFR2307ZTRLPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR2307ZTRLPBF CAD Model

Description

The Infineon Technologies 069536-IRFR2307ZTRLPBF is an N-Channel MOSFET that is designed for use in discrete semiconductor products.

  • Power Dissipation: 110W (Tc)
  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 42A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 100μA
  • Maximum Rds On: 16 mOhm @ 32A, 10V
  • Package: D-Pak
  • Dimensions: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 75nC @ 10V
  • Supply and Demand Status: Balanced

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75+ $1.4214 $106.6050
110+ $1.3770 $151.4700
155+ $1.3326 $206.5530
195+ $1.2882 $251.1990
260+ $1.1549 $300.2740
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