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Same model may have multiple batches, images only for reference.
IRFR2407TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR2407TRPBF

Part No IRFR2407TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 42A DPAK
Datasheet
IRFR2407TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 2400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 26 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1040039-IRFR2407TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR2407TRPBF CAD Model

Description

The Infineon Technologies IRFR2407TRPBF is an active N-channel MOSFET with a maximum drain-source breakdown voltage of 75V and a continuous drain current of 42A @ 25°C.

  • Maximum Power Dissipation: 110W
  • Package: D-Pak
  • Typical Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On: 26mOhm @ 25A, 10V
  • Application: discrete semiconductor products
  • Popularity: medium popularity.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1214 $50.4630
110+ $0.9201 $101.2110
170+ $0.8914 $151.5380
235+ $0.8626 $202.7110
300+ $0.8339 $250.1700
405+ $0.7476 $302.7780
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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