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Same model may have multiple batches, images only for reference.
IRFR24N15DPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR24N15DPBF

Part No IRFR24N15DPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 24A DPAK
Datasheet
IRFR24N15DPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 45nC @ 10V
Max Input Capacitance 890pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 95 mOhm @ 14A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 069540-IRFR24N15DPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFR24N15DPBF CAD Model

Description

The Infineon Technologies IRFR24N15DPBF is a N-channel MOSFET transistor, designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 150V
  • Maximum Continuous Drain Current: 24A @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Input Capacitance: 890pF @ 25V
  • Maximum Rds On: 95 mOhm @ 14A, 10V
  • Package: D-Pak
  • Mounting: SMT
  • Power Dissipation: 140W @ Tc
  • Temperature Range: -55°C to 175°C (TJ)
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5221 $60.0415
240+ $0.4885 $117.2400
370+ $0.4716 $174.4920
530+ $0.4379 $232.0870
690+ $0.4211 $290.5590
860+ $0.4043 $347.6980
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Availability: 28,160 pieces
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