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Same model may have multiple batches, images only for reference.
IRFR3103 Real Image
Same model may have multiple batches, images only for reference.

IRFR3103

Part No IRFR3103
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 400V 1.7A DPAK
Datasheet
IRFR3103 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 400V
Continuous Drain Current at 25°C 1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 170pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 25W (Tc)
Maximum Rds On at Id,Vgs 3.6 Ohm @ 1A, 10V
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047035-IRFR3103
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFR3103 CAD Model

Description

The IRFR3103 is an electronic component manufactured by Infineon Technologies.

  • Supply and Demand Status: Sufficient
  • Win Source Part Number: 1047035-IRFR3103
  • Technology: MOSFET
  • Polarity: N-Channel
  • Drain-Source Breakdown Voltage: 400V
  • Case/Package: D-Pak
  • Temperature Range: -55°C to 175°C (TJ)
  • Continuous Drain Current: 1.7A (Ta)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On at Id,Vgs: 3.6 Ohm @ 1A, 10V

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