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IRFR3707ZTRRPBF

Part No IRFR3707ZTRRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 56A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.25V @ 25μA
Max Gate Charge 14nC @ 4.5V
Max Input Capacitance 1150pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 9.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 069556-IRFR3707ZTRRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR3707ZTRRPBF CAD Model

Description

The Infineon Technologies IRFR3707ZTRRPBF is a N-Channel MOSFET transistor that is designed for use in Discrete Semiconductor Products.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 56A (Tc) @ 25°C
  • Power Dissipation: 50W (Tc)
  • Drive Voltage: 4.5V, 10V (Max Rds On, Min Rds On)
  • Technology: SMD (SMT)
  • Packaging: Reel - TR
  • Temperature Range: -55°C to 175°C (TJ)
  • Case/Package: D-Pak, TO-252-3, DPak (2 Leads + Tab), SC-63
  • Gate-Source Threshold Voltage: 2.25V @ 25μA
  • Maximum Gate Charge: 14nC @ 4.5V
  • Maximum Input Capacitance: 1150pF @ 15V
  • Maximum Gate-Source Voltage: ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7159 $50.1130
175+ $0.5875 $102.8125
265+ $0.5691 $150.8115
365+ $0.5507 $201.0055
470+ $0.5324 $250.2280
630+ $0.4773 $300.6990
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,230 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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