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Same model may have multiple batches, images only for reference.
IRFR3710ZPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR3710ZPBF

Part No IRFR3710ZPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 42A DPAK
Datasheet
IRFR3710ZPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 100nC @ 10V
Max Input Capacitance 2930pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 18 mOhm @ 33A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047059-IRFR3710ZPBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFR3710ZPBF CAD Model

Description

The Infineon Technologies 1047059-IRFR3710ZPBF is an N-channel MOSFET transistor that is designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 140W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current at 25°C: 42A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On at Id, Vgs: 18 mOhm @ 33A, 10V
  • Mounting Technology: SMD (SMT)
  • Package: D-Pak
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 2930pF @ 25V
  • Not for: new designs
  • Popularity: medium
  • Supply and Demand Status: sufficient

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Quantity Unit Price Ext. Price
110+ $0.4650 $51.1500
230+ $0.4350 $100.0500
360+ $0.4200 $151.2000
515+ $0.3900 $200.8500
670+ $0.3750 $251.2500
835+ $0.3600 $300.6000
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Availability: 40,220 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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