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IRFR3910PBF

Part No IRFR3910PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 16A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 44nC @ 10V
Max Input Capacitance 640pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 79W (Tc)
Maximum Rds On at Id,Vgs 115 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 017683-IRFR3910PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR3910PBF CAD Model

Description

The Infineon Technologies IRFR3910PBF is a N-Channel MOSFET that offers a drain-source breakdown voltage of 100V and a continuous drain current of 16A @ 25°C.

  • Maximum Rds On: 115 mOhm @ 10A and 10V
  • Package: D-Pak package
  • Designed for use in: a wide range of applications including power supplies, DC-DC converters, and motor control circuits
  • Maximum Power Dissipation: 79W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)
  • Market Popularity: high
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.3538 $51.3010
305+ $0.3314 $101.0770
470+ $0.3202 $150.4940
675+ $0.2978 $201.0150
875+ $0.2866 $250.7750
1,090+ $0.2754 $300.1860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 37,610 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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