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IRFR4620PBF

Part No IRFR4620PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 24A D-PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 100μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 1710pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 144W (Tc)
Maximum Rds On at Id,Vgs 78 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 205391-IRFR4620PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFR4620PBF CAD Model

Description

The Infineon Technologies IRFR4620PBF is a MOSFET semiconductor device that features N-Channel transistor polarity.

  • Category: Discrete Semiconductor Products
  • Package: D-Pak
  • Power Dissipation: 144W (Tc)
  • Continuous Drain Current: 24A (Tc)
  • Drain-Source Breakdown Voltage: 200V
  • Maximum Gate-Source Voltage: ±20V
  • Input Capacitance: 1710pF @ 50V
  • Drive Voltage: 10V
  • Gate-Source Threshold Voltage: 5V @ 100μA
  • Maximum Rds On at Id,Vgs: 78 mOhm @ 15A, 10V
  • Operating Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9504 $52.2720
115+ $0.8903 $102.3845
175+ $0.8602 $150.5350
250+ $0.8000 $200.0000
325+ $0.7700 $250.2500
410+ $0.7399 $303.3590
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 25,970 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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