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Same model may have multiple batches, images only for reference.
IRFR5505TRR Real Image
Same model may have multiple batches, images only for reference.

IRFR5505TRR

Part No IRFR5505TRR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 55V 18A DPAK / Trans MOSFET P-CH 55V 18A 3-Pin(2+Tab) DPAK T/R
Datasheet
IRFR5505TRR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series HEXFET
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type P
Technology MOSFET
Drain Source Voltage 55V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 32nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 650pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 57W (Tc)
Rds On (Maximum) @ Id, Vgs 110 mOhm @ 9.6A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package D-Pak
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 777068-IRFR5505TRR
Popularity Medium
Supply and Demand Status Limited
Family Name IRFR5505
Introduction Date March 03, 2004
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRFR5505TRR CAD Model

Description

The Infineon Technologies MOSFET is a HEXFET series product with a TO-252-3, DPak (2 Leads + Tab), SC-63 package.

  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Channel Type: P
  • Drain-Source Voltage: 55V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Gate Charge (Qg) (maximum) @ Vgs: 32nC @ 10V
  • Input Capacitance (Ciss) (maximum) @ Vds: 650pF @ 25V
  • Power Dissipation (maximum): 57W (Tc)
  • Rds On (maximum) @ Id, Vgs: 110 mOhm @ 9.6A @ 10V
  • Status: Obsolete(EOL)
  • Alternative parts: 2SJ598-Z-AZ, NTD20P06LT4G, FQD17P06TM, SFR9034

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