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Same model may have multiple batches, images only for reference.
IRFR812PBF Real Image
Same model may have multiple batches, images only for reference.

IRFR812PBF

Part No IRFR812PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 500V 3.6A 3-Pin(2+Tab) DPAK Tube / MOSFET N-CH 500V 3.6A DPAK
Datasheet
IRFR812PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 810pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 78W (Tc)
Maximum Rds On at Id,Vgs 2.2 Ohm @ 2.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047094-IRFR812PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRFR812
Introduction Date April 11, 2012
ECCN EAR99
Country of Origin Mexico
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRFR812PBF CAD Model

Description

The IRFR812PBF is a N-Channel MOSFET, which is widely used in Discrete Semiconductor Products.

  • Manufacturer: Infineon Technologies
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 3.6A (Tc)
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Max Gate Charge: 20nC @ 10V
  • Maximum Rds On: 2.2 Ohm @ 2.2A, 10V
  • Halogen Free: Yes
  • Popularity: High

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