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Same model may have multiple batches, images only for reference.
SPD04N60S5 Real Image
Same model may have multiple batches, images only for reference.

SPD04N60S5

Part No SPD04N60S5
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 4.5A TO-252
Datasheet
SPD04N60S5 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 200μA
Max Gate Charge 22.9nC @ 10V
Max Input Capacitance 580pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 950 mOhm @ 2.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1101542-SPD04N60S5
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial
Ultra Librarian 3D Model Ultra Librarian SPD04N60S5 CAD Model

Description

The Infineon Technologies SPD04N60S5 is an N-channel MOSFET that comes in PG-TO252-3 packaging.

  • Packaging: PG-TO252-3
  • Maximum Power Dissipation: 50W @ Tc
  • Maximum Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 4.5A @ 25°C
  • Gate-Source Threshold Voltage: 5.5V @ 200μA
  • Maximum Gate Charge: 22.9nC @ 10V
  • Maximum Input Capacitance: 580pF @ 25V
  • Maximum Rds On: 950 mOhm @ 2.8A and 10V
  • Application: Industrial Applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0193 $61.1580
140+ $0.8365 $117.1100
215+ $0.8103 $174.2145
295+ $0.7842 $231.3390
385+ $0.7581 $291.8685
510+ $0.6796 $346.5960
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Availability: 9,540 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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