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Same model may have multiple batches, images only for reference.
IRFS17N20DTRR Real Image
Same model may have multiple batches, images only for reference.

IRFS17N20DTRR

Part No IRFS17N20DTRR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 16A D2PAK
Datasheet
IRFS17N20DTRR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 50nC @ 10V
Max Input Capacitance 1100pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 3.8W (Ta), 140W (Tc)
Maximum Rds On at Id,Vgs 170 mOhm @ 9.8A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 123044-IRFS17N20DTRR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFS17N20DTRR CAD Model

Description

The Infineon Technologies IRFS17N20DTRR is a N-Channel MOSFET that offers a drain-source breakdown voltage of 200V and a continuous drain current of 16A at 25°C.

  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 16A @ 25°C
  • Maximum Rds On: 170 mOhm @ 9.8A and 10V
  • Package: D2PAK package
  • Power Dissipation: 3.8W (Ta) and 140W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)

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19+ $6.3329 $120.3251
29+ $6.1354 $177.9266
39+ $5.9379 $231.5781
51+ $5.7392 $292.6992
68+ $5.1455 $349.8940
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