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IRFS4127PBF

Part No IRFS4127PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 72A D2-PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 150nC @ 10V
Max Input Capacitance 5380pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 375W (Tc)
Maximum Rds On at Id,Vgs 22 mOhm @ 44A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 089728-IRFS4127PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFS4127PBF CAD Model

Description

The Infineon Technologies IRFS4127PBF MOSFET is a high-performance N-channel power MOSFET.

  • Drain-Source Breakdown Voltage: 200V
  • Maximum Continuous Drain Current: 72A @ 25°C
  • Package: D2PAK package
  • Application: Designed for use in a wide range of applications, including power supplies, motor control, and high-frequency inverters.
  • Gate Charge: 150nC @ 10V
  • Suitable for: High-frequency switching applications
  • Feature: Halogen-free and is compliant with the RoHS directive.
  • Status: common-used part and has a high popularity rating.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8857 $53.1420
125+ $0.8286 $103.5750
190+ $0.8000 $152.0000
270+ $0.7429 $200.5830
350+ $0.7143 $250.0050
440+ $0.6858 $301.7520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 87,450 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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