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IRFS4310ZPBF

Part No IRFS4310ZPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 120A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 150μA
Max Gate Charge 170nC @ 10V
Max Input Capacitance 6860pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 250W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 083593-IRFS4310ZPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFS4310ZPBF CAD Model

Description

The IRFS4310ZPBF is a N-Channel MOSFET, manufactured by Infineon Technologies.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 120A (Tc)
  • Maximum Rds On at Id,Vgs: 6 mOhm @ 75A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 4V @ 150μA
  • Maximum Gate Charge: 170nC @ 10V
  • Maximum Input Capacitance: 6860pF @ 50V
  • Power Dissipation (Max): 250W (Tc)
  • Mounting: SMD (SMT)
  • Package: D2PAK
  • Application: Widely used in Discrete Semiconductor Products
  • Feature: Commonly used with a drive voltage (Max Rds On, Min Rds On) of 10V.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9964 $54.8020
110+ $0.9322 $102.5420
170+ $0.9000 $153.0000
240+ $0.8357 $200.5680
315+ $0.8036 $253.1340
390+ $0.7715 $300.8850
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 22,370 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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