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IRFS4310ZTRLPBF Real Image IRFS4310ZTRLPBF real image376
IRFS4310ZTRLPBF Real Image IRFS4310ZTRLPBF real image376
Same model may have multiple batches, images only for reference.

IRFS4310ZTRLPBF

Part No IRFS4310ZTRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 120A D2PAK
Datasheet
IRFS4310ZTRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 150μA
Max Gate Charge 170nC @ 10V
Max Input Capacitance 6860pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 250W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 017713-IRFS4310ZTRLPBF
Family Name IRFS4310Z
Introduction Date March 05, 2007
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFS4310ZTRLPBF CAD Model

Description

The IRFS4310ZTRLPBF is an N-channel MOSFET transistor from Infineon Technologies.

  • Package: D2PAK package
  • Drain-Source Breakdown Voltage (Vds): 100V
  • Maximum Continuous Drain Current (Id): 120A (Tc) @ 25°C
  • Maximum On-Resistance (Rds On) @ Id, Vgs: 6 mOhm @ 75A, 10V
  • Gate-Source Threshold Voltage: 4V @ 150μA
  • Gate Charge (Qg): 170nC @ 10V
  • Input Capacitance (Ciss): 6860pF @ 50V
  • Temperature Range: -55°C to 175°C (TJ)
  • Application: Ideal for use in power management applications.

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