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IRFS4410TRLPBF

Part No IRFS4410TRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 88A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 88A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 150μA
Max Gate Charge 180nC @ 10V
Max Input Capacitance 5150pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 10 mOhm @ 58A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 083671-IRFS4410TRLPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFS4410TRLPBF CAD Model

Description

The Infineon Technologies IRFS4410TRLPBF is an N-channel MOSFET transistor designed for use in power management applications.

  • Maximum Power Dissipation: 200W
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 88A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 150μA
  • Maximum Gate Charge: 180nC @ 10V
  • Maximum Input Capacitance: 5150pF @ 50V
  • Maximum Rds On @ Id,Vgs: 10 mOhm @ 58A, 10V
  • Package: D2PAK package
  • Mounting: Suitable for surface-mount technology.
  • Temperature Range: -55°C to 175°C (TJ)
  • Status: a common-used part with high popularity in the market.
  • Supply and demand status: balanced.

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $4.9756 $54.7316
25+ $4.0825 $102.0625
38+ $3.9550 $150.2900
53+ $3.8274 $202.8522
68+ $3.6998 $251.5864
91+ $3.3171 $301.8561
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 619 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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