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Same model may have multiple batches, images only for reference.
IRFS4620PBF Real Image
Same model may have multiple batches, images only for reference.

IRFS4620PBF

Part No IRFS4620PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 24A D2PAK
Datasheet
IRFS4620PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 100μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 1710pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 144W (Tc)
Maximum Rds On at Id,Vgs 77.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047148-IRFS4620PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFS4620PBF CAD Model

Description

The Infineon Technologies IRFS4620PBF is an N-channel MOSFET with a drain-source breakdown voltage of 200V and a continuous drain current of 24A.

  • Power Dissipation: 144W (Tc)
  • Gate-Source Threshold Voltage: 5V @ 100μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 77.5 mOhm @ 15A, 10V
  • Package: D2PAK case
  • Operating Temperature: -55°C to 175°C (TJ)
  • Status: Not for New Designs
  • Popularity: Medium
  • Application: Discrete Semiconductor Products

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