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Same model may have multiple batches, images only for reference.
IRFS52N15DTRLP Real Image
Same model may have multiple batches, images only for reference.

IRFS52N15DTRLP

Part No IRFS52N15DTRLP
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 51A D2PAK
Datasheet
IRFS52N15DTRLP Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 89nC @ 10V
Max Input Capacitance 2770pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 3.8W (Ta), 230W (Tc)
Maximum Rds On at Id,Vgs 32 mOhm @ 36A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 101687-IRFS52N15DTRLP
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFS52N15DTRLP CAD Model

Description

The IRFS52N15DTRLP is a high-performance N-channel MOSFET manufactured by Infineon Technologies.

  • Operating Temperature: -55°C to 175°C
  • Maximum Power Dissipation: 3.8W (Ta), 230W (Tc)
  • Package Type: D2PAK
  • Mounting Technology: SMD
  • Maximum Drain-Source Breakdown Voltage: 150V
  • Maximum Continuous Drain Current: 51A (Tc) @ 25°C
  • Maximum Rds On @ Id, Vgs: 32 mOhm @ 36A, 10V
  • Gate-Source Voltage: ±30V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 89nC @ 10V
  • Maximum Input Capacitance: 2770pF @ 25V
  • Commonly Used: Yes

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.4245 $56.9800
80+ $1.3326 $106.6080
120+ $1.2867 $154.4040
170+ $1.1948 $203.1160
220+ $1.1488 $252.7360
275+ $1.1029 $303.2975
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Availability: 30,300 pieces
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