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IRFS7534-7PPBF

Part No IRFS7534-7PPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 60V 240A D2PAK  /  N-Channel 60 V 240A (Tc) 290W (Tc) Surface Mount D2PAK (7-Lead)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series HEXFET®, StrongIRFET™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 240A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.95mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 300 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9990 pF @ 25 V
Power Dissipation (Max) 290W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK (7-Lead)
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001557490
Standard Package 3,000
Win Source Part Number 1065588-IRFS7534-7PPBF
Ultra Librarian 3D Model Ultra Librarian IRFS7534-7PPBF CAD Model

Description

The Infineon Technologies 1065588-IRFS7534-7PPBF is a MOSFET (Metal Oxide) transistor that belongs to the HEXFET® and StrongIRFET™ series.

  • FET Type: N-Channel
  • Drain to Source Voltage (Vdss): 60 V
  • Continuous Drain Current (Id): 240A (Tc) @ 25°C
  • Rds On (Max): 1.95mOhm @ 100A, 10V
  • Gate Charge (Qg) (Max): 300 nC @ 10 V
  • Input Capacitance (Ciss) (Max): 9990 pF @ 25 V
  • Vgs (Max): ±20V
  • Package: TO-263-7, D²Pak (6 Leads + Tab)
  • Power Dissipation (Max): 290W (Tc)

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