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IRFSL23N20D102P

Part No IRFSL23N20D102P
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 24A TO-262
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 86nC @ 10V
Max Input Capacitance 1960pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 3.8W (Ta), 170W (Tc)
Maximum Rds On at Id,Vgs 100 mOhm @ 14A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 069597-IRFSL23N20D102P
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFSL23N20D102P CAD Model

Description

The Infineon Technologies 069597-IRFSL23N20D102P is an obsolete (EOL) N-channel MOSFET designed for use in discrete semiconductor products.

  • Status: Obsolete (EOL)
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 24A
  • Power Dissipation: 3.8W (Ta), 170W (Tc)
  • Gate-Source Threshold Voltage: 5.5V @ 250μA
  • Maximum Gate Charge: 86nC @ 10V
  • Maximum Input Capacitance: 1960pF @ 25V
  • Maximum Rds On @ Id,Vgs: 100 mOhm @ 14A, 10V
  • Packaging: TO-262
  • Mounting: Through-hole

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.0582 $61.7460
70+ $1.6886 $118.2020
110+ $1.6355 $179.9050
150+ $1.5835 $237.5250
190+ $1.5304 $290.7760
255+ $1.3721 $349.8855
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,910 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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