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IRFSL4227PBF Real Image1 IRFSL4227PBF Real Image2
Same model may have multiple batches, images only for reference.
IRFSL4227PBF Real Image1 IRFSL4227PBF Real Image2
IRFSL4227PBF Real Image1 IRFSL4227PBF Real Image2
Same model may have multiple batches, images only for reference.

IRFSL4227PBF

Part No IRFSL4227PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 62A TO-262
Datasheet
IRFSL4227PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 98nC @ 10V
Max Input Capacitance 4600pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 330W (Tc)
Maximum Rds On at Id,Vgs 26 mOhm @ 46A, 10V
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 069598-IRFSL4227PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFSL4227PBF CAD Model

Description

The Infineon Technologies 069598-IRFSL4227PBF is a N-Channel MOSFET with a drain-source breakdown voltage of 200V and continuous drain current of 62A @ 25°C.

  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 62A @ 25°C
  • Mounting: Through-hole
  • Maximum Power Dissipation: 330W
  • Maximum Rds On: 26 mOhm @ 46A, 10V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Input Capacitance: 4600pF @ 25V
  • Application: Discrete Semiconductor Products
  • Operating Temperature: -40°C to 175°C (TJ)
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA

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