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Same model may have multiple batches, images only for reference.
IRFSL4710PBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRFSL4710PBF

Part No IRFSL4710PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 75A TO-262 / Trans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-262
Datasheet
IRFSL4710PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series HEXFET
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 170nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 6160pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 3.8W (Ta), 200W (Tc)
Rds On (Maximum) @ Id, Vgs 14 mOhm @ 45A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-262
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 777078-IRFSL4710PBF
Popularity Medium
Supply and Demand Status Limited
Family Name IRFSL4710
Introduction Date April 30, 2004
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRFSL4710PBF CAD Model

Description

The Infineon Technologies IRFSL4710PBF is a HEXFET MOSFET that is designed for use in a wide range of applications, including power supplies, motor control, and lighting applications.

  • Continuous Drain Current: 75A
  • Maximum Power Dissipation: 3.8W
  • Channel Type: N
  • Drain-Source Voltage: 100V
  • Gate Charge: 170nC @ 10V
  • Input Capacitance: 6160pF @ 25V
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA

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