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Same model may have multiple batches, images only for reference.
IRFU2407 Real Image
Same model may have multiple batches, images only for reference.

IRFU2407

Part No IRFU2407
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 42A I-PAK
Datasheet
IRFU2407 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 2400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 26 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package IPAK (TO-251)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1047203-IRFU2407
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFU2407 CAD Model

Description

The Infineon Technologies MOSFET is a N-Channel power transistor with a drain-source breakdown voltage of 75V and a continuous drain current of 42A @ 25°C.

  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 42A @ 25°C
  • Power Dissipation: 110W (Tc)
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Mounting Type: Through-Hole
  • Package: IPAK (TO-251)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On: 26 mOhm @ 25A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 110nC @ 10V
  • Category: Discrete Semiconductor Products
  • Status: Obsolete (EOL)

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6722 $60.4980
210+ $0.5521 $115.9410
325+ $0.5348 $173.8100
450+ $0.5174 $232.8300
580+ $0.5001 $290.0580
775+ $0.4481 $347.2775
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Availability: 9,210 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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