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Same model may have multiple batches, images only for reference.
IRFU3504ZPBF Real Image
Same model may have multiple batches, images only for reference.

IRFU3504ZPBF

Part No IRFU3504ZPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 42A I-PAK
Datasheet
IRFU3504ZPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 45nC @ 10V
Max Input Capacitance 1510pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 90W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 42A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package IPAK (TO-251)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 205407-IRFU3504ZPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFU3504ZPBF CAD Model

Description

The Infineon Technologies IRFU3504ZPBF is a N-Channel MOSFET that comes in a TO-251-3 Short Leads, IPak, TO-251AA package.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 42A (Tc) @ 25°C
  • Maximum Rds On: 9 mOhm @ 42A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 45nC @ 10V
  • Maximum Input Capacitance: 1510pF @ 25V
  • Status: Obsolete(EOL)
  • Temperature Range: -55°C to 175°C (TJ)
  • Power Dissipation: 90W (Tc)
  • Drive Voltage: 10V

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